45 citations · 139 across the 9 of their papers we have counts for
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A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia +5
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reporte…
Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky +7
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The techn…
Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Mylène Sauty, Nicolas M. S. Lopes, Jean-Philippe Banon +7
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield o…