45 citations · 139 across the 9 of their papers we have counts for
9 papers
A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia +5
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reporte…
Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky +7
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The techn…
Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Mylène Sauty, Nicolas M. S. Lopes, Jean-Philippe Banon +7
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield o…
Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces
N. K. Lewis, Y. Lassailly, L. Martinelli +8
The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatur…
Domain formation mechanism of the Si(110)"16 x 2" reconstruction
N. K. Lewis, N. B. Clayburn, E. Brunkow +6
The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain o…
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
W. Hahn, J. -M. Lentali, P. Polovodov +11
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measu…