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cond-mat.mtrl-sci2018
Domain formation mechanism of the Si(110)"16 x 2" reconstruction
N. K. Lewis, N. B. Clayburn, E. Brunkow +6
The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain o…
cond-mat.mes-hall2018
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
W. Hahn, J. -M. Lentali, P. Polovodov +11
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measu…