79 citations · 189 across the 12 of their papers we have counts for
12 papers
Advanced structural characterization of single-walled carbon nanotubes with 4D-STEM
Antonin Louiset, Daniel Förster, Vincent Jourdain +5
Single wall carbon nanotubes (SWCNT) exhibit remarkable optical and electrical properties making them one of the most promising materials for next generation electronic and optoele…
Selective area epitaxy of in-plane HgTe nanostrcutures on CdTe(001) substrate
Nicolas Chaize, Xavier Baudry, Pierre-Henri Jouneau +10
Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sens…
Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe using 4D-STEM
D. Dosenovic, K. Sharma, S. Dechamps +10
There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic proper…
Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters
Jesus Cañas, Névine Rochat, Adeline Grenier +8
We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emiss…
Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers
Djordje Dosenovic, Samuel Dechamps, Celine Vergnaud +10
Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical prope…
The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM
Bruno C da Silva, Zahra S Momtaz, Lucas Bruas +4
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of diffe…