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20032025
most citedGrowth and optical properties of GaN/AlN quantum wells

79 citations · 189 across the 12 of their papers we have counts for

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4 papers · 1 filter

physics.app-ph2023★ 9 cited

Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters

Jesus Cañas, Névine Rochat, Adeline Grenier +8

We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emiss…

physics.app-ph2022★ 17 cited

The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM

Bruno C da Silva, Zahra S Momtaz, Lucas Bruas +4

Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of diffe…

physics.app-ph2022★ 24 cited

Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4

A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…

physics.app-ph2020★ 18 cited

High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast

Victor Boureau, Michal Staňo, Jean-Luc Rouvière +3

We compare two transmission electron microscopy (TEM) based techniques that can provide highly spatially resolved quantitative measurements of magnetic induction fields at high sen…