79 citations · 189 across the 12 of their papers we have counts for
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physics.app-ph2022★ 17 cited
The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM
Bruno C da Silva, Zahra S Momtaz, Lucas Bruas +4
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of diffe…
physics.app-ph2022★ 24 cited
Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…