402 citations · 918 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2003★ 402 cited
Atomically precise placement of single dopants in Si
S. R. Schofield, N. J. Curson, M. Y. Simmons +4
We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study…
cond-mat2003★ 58 cited
Measurement of phosphorus segregation in silicon at the atomic-scale using STM
Lars Oberbeck, Neil J. Curson, Toby Hallam +3
In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the…