activity
20032020
most citedAtomically precise placement of single dopants in Si

402 citations · 918 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2020★ 38 cited

Low-temperature synthesis and electrocatalytic application of large-area PtTe2 thin films

John B. Mc Manus, Dominik V. Horvath, Michelle P. Browne +10

The synthesis of transition metal dichalcogenides (TMDs) has been a primary focus for 2D nanomaterial research over the last 10 years, however, only a small fraction of this resear…

cond-mat.mtrl-sci2015★ 240 cited

Raman Characterization of Platinum Diselenide Thin Films

Maria O'Brien, Niall McEvoy, Carlo Motta +12

Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-as…

cond-mat.mtrl-sci2015★ 154 cited

Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects

Maria OBrien, Niall McEvoy, Damien Hanlon +3

Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable…

cond-mat.mes-hall2013★ 26 cited

Origami-based spintronics in graphene

A. T. Costa, M. S. Ferreira, Toby Hallam +2

We show that periodically folded graphene sheets with enhanced spin-orbit interaction due to curvature effects can carry spin polarized currents and have gaps in the electronic spe…

cond-mat.mtrl-sci2003★ 402 cited

Atomically precise placement of single dopants in Si

S. R. Schofield, N. J. Curson, M. Y. Simmons +4

We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study…

cond-mat2003★ 58 cited

Measurement of phosphorus segregation in silicon at the atomic-scale using STM

Lars Oberbeck, Neil J. Curson, Toby Hallam +3

In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the…