30 citations · 34 across the 10 of their papers we have counts for
10 papers
Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with -3dB bandwidth of >60 GHz at NIR wavelength
Ekaterina Ponizovskaya Devine, Toshishige Yamada, Shih-Yuan Wang +1
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm all…
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine +8
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have exp…
CMOS image sensor with micro-nano holes to improve NIR optical efficiency: micro-holes on top surface vs on bottom
E. Ponizovskaya Devine, Ahasan Ahamad, Ahmed Mayet +5
We study the nano- and micro-structures that increase the optical efficiency of the CMOS image pixels in visible and infrared. We consider the difference between the micro-holes at…
Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm
Ekaterina Ponizovskaya-Devine, Ahmed S. Mayet, Amita Rawat +5
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor…
Optimization of CMOS image sensors with single photon-trapping hole per pixel for enhanced sensitivity in near-infrared
E. Ponizovskaya Devine, Ahasan Ahamed, Ahmed S. Mayet +7
The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photo…
Maximizing absorption in photon trapping ultra-fast silicon photodetectors
Cesar Bartolo-Perez, Wayesh Qarony, Soroush Ghandiparsi +9
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Rang…
Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared
E. Ponizovskaya Devine, Wayesh Qarony, Ahasan Ahamed +7
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the opti…
Enhanced quantum efficiency and reduction of reflection for MSM photodetectors with nano-structured surface
Ekaterina Ponizovskaya Devine, Yang Gao, Cesar Perez +4
The photon trapping nano-structures help to enhance quantum efficiency and reduce reflection for MSM photodetector that allows fast Si photodetectors at wavelength 800-950nm. The n…
Optimization of light trapping micro-hole structure for high-speed high-efficiency silicon photodiodes
Ekaterina Ponizovskaya Devine, Hilal Cansizoglu, Yang Gao +8
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disord…
Anisotropic Metal-Insulator Transition in Epitaxial Thin Films
I. B. Altfeder, X. Liang, D. M. Chen +1
Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibi…