30 citations · 34 across the 10 of their papers we have counts for
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Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine +8
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have exp…
Optimization of CMOS image sensors with single photon-trapping hole per pixel for enhanced sensitivity in near-infrared
E. Ponizovskaya Devine, Ahasan Ahamed, Ahmed S. Mayet +7
The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photo…
Maximizing absorption in photon trapping ultra-fast silicon photodetectors
Cesar Bartolo-Perez, Wayesh Qarony, Soroush Ghandiparsi +9
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Rang…
Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared
E. Ponizovskaya Devine, Wayesh Qarony, Ahasan Ahamed +7
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the opti…