219 citations · 3.1k across the 69 of their papers we have counts for
7 papers · 1 filter
Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control
Yu Fu, Jing Li, Jules Papin +12
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discove…
Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
Theodor Lundberg, David J. Ibberson, Jing Li +12
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done…
Spin-valley coupling anisotropy and noise in CMOS quantum dots
Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt +16
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is…
Two-body Wigner molecularization in asymmetric quantum dot spin qubits
José C. Abadillo-Uriel, Biel Martinez, Michele Filippone +1
Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is no…
Variability of electron and hole spin qubits due to interface roughness and charge traps
Biel Martinez, Yann-Michel Niquet
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process…
Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
Rami Ezzouch, Simon Zihlmann, Vincent P. Michal +12
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for qua…