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most citedX-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

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cond-mat.mtrl-sci2021★ 6 cited

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Thomas Auzelle, Chiara Sinito, Jonas Lähnemann +5

We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epi…