55 citations · 55 across the 2 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2024
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…
cond-mat.mes-hall2012★ 55 cited
Current path in light emitting diodes based on nanowire ensembles
Friederich Limbach, Christian Hauswald, Jonas Lähnemann +8
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam…
cond-mat.mtrl-sci2005
GaN:Gd: A superdilute ferromagnetic semiconductor with a Curie temperature above 300 K
S. Dhar, O. Brandt, M. Ramsteiner +2
We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment i…