224 citations · 430 across the 6 of their papers we have counts for
6 papers
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
M Gómez Ruiz, Aron Castro, Jesús Herranz +5
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of…
Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy
Thomas Auzelle, Chiara Sinito, Jonas Lähnemann +5
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epi…
Current path in light emitting diodes based on nanowire ensembles
Friederich Limbach, Christian Hauswald, Jonas Lähnemann +8
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam…
GaN:Gd: A superdilute ferromagnetic semiconductor with a Curie temperature above 300 K
S. Dhar, O. Brandt, M. Ramsteiner +2
We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment i…
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
V. M. Kaganer, O. Brandt, A. Trampert +1
We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in t…