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cond-mat.mes-hall2010
Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction
N. Hrauda, J. J. Zhang, E. Wintersberger +9
SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ra…
cond-mat.mes-hall2005
Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells
G. Grabecki, J. Wrobel, T. Dietl +7
Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between PbEuTe barriers. Becaus…