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20032005
most citedModulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures

21 citations · 75 across the 6 of their papers we have counts for

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cond-mat.mes-hall2003★ 10 cited

New Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors

Frank Fischer, Matthew Grayson, Erwin Schuberth +3

Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that…