New Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors
arXiv:cond-mat/0311454 · doi:10.1016/j.physe.2003.11.227
Abstract
Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (001) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-Level. This remarkable new anisotropy is independent of the current direction and depends on the polarity of the magnetic field.
3 Pages, 4 figures, Latex, uses elsart.cls and physart.cls, to be published in Physica E Added reference, made contact configuration more clear