most citedElectric-Field-Induced Domain Walls in Wurtzite Ferroelectrics

39 citations · 60 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2024

Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires

Ding Wang, Ping Wang, Shubham Mondal +5

The pursuit of extreme device miniaturization and the exploration of novel physical phenomena have spurred significant interest in crystallographic phase control and ferroelectric…

physics.app-ph2024

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Haris Naeem Abbasi, Jie Zhou, Ding Wang +9

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offeri…

cond-mat.mtrl-sci2024★ 21 cited

Rethinking Polarization in Wurtzite Semiconductors

Ding Wang, Danhao Wang, Samuel Yang +1

Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and functionality of gallium nitride (GaN)-the most produced semiconductor materials second onl…

cond-mat.mtrl-sci2023★ 39 cited

Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics

Ding Wang, Danhao Wang, Mahlet Molla +8

Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics…

physics.app-ph2023

Domain control and periodic poling of epitaxial ScAlN

Fengyan Yang, Ding Wang, Ping Wang +3

ScAlN is an emerging ferroelectric material that possesses large band gap, strong piezoelectricity, and holds great promises for enhanced χ^{(2)} nonliearity. In this study, we dem…