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physics.app-ph2024
Si/AlN p-n heterojunction interfaced with ultrathin SiO2
Haris Naeem Abbasi, Jie Zhou, Ding Wang +9
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offeri…
physics.app-ph2023
Domain control and periodic poling of epitaxial ScAlN
Fengyan Yang, Ding Wang, Ping Wang +3
ScAlN is an emerging ferroelectric material that possesses large band gap, strong piezoelectricity, and holds great promises for enhanced χ^{(2)} nonliearity. In this study, we dem…