Rethinking Polarization in Wurtzite Semiconductors

Abstract

Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and functionality of gallium nitride (GaN)-the most produced semiconductor materials second only to silicon. However, recent direct experimental measurements unveiled remanent polarization of unexpectedly large magnitudes and opposite orientations to traditionally anticipated. This significant discrepancy not only poses a formidable challenge to our existing theoretical paradigms but also accentuates the need for a critical rethinking and methodological refinement to integrate these novel observations with established knowledge, mitigating potential misunderstandings and misconceptions in this rapidly evolving field.

References in corpus (7)

• Spontaneous polarization and piezoelectric constants of III-V nitrides
• AlScN: A III-V semiconductor based ferroelectric
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• Accurate calculation of polarization-related quantities in semiconductors
• Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides
• Piezoelectric effect and polarization switching in Al${}_{1-x}$Sc${}_x$N
• Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al${}_{0.85}$Sc${}_{0.15}$N

Cited by in corpus (1)

• Ferroelectric AlBN Films by Molecular Beam Epitaxy