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On Quantifying Large Lattice Relaxations in Photovoltaic Devices
Marco Nardone, Yasas Patikirige, Kyoung E. Kweon +5
Temporal variations of Cu(In,Ga)Se photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h were analyzed using the…
MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures
Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley +3
We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure…
Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3
Jared M. Johnson, Zhen Chen, Joel B. Varley +10
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the pr…