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cond-mat.mes-hall2025
A scanning probe microscopy approach for identifying defects in aluminum oxide
Leah Tom, Zachary J. Krebs, Joel B. Varley +8
The coherence of quantum dot qubits fabricated in semiconductors is often limited by charge noise from defects in gate dielectrics, which are material- and process-dependent. Chara…
cond-mat.mtrl-sci2025★ 16 cited
Quantitative Modeling of Point Defects in -Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics
Khandakar Aaditta Arnab, Megan Stephens, Isaac Maxfield +5
B-gallium oxide (B-Ga2O3) is of high interest for power electronics because of its unique combination of melt growth, epitaxial growth, n-type dopability, ultrawide bandgap, and hi…