136 citations · 505 across the 18 of their papers we have counts for
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cond-mat.other2013
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
P. Stoliar, P. Levy, M. J. Sánchez +7
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here w…
cond-mat.other2010★ 38 cited
Hysteresis Switching Loops in Ag-manganite memristive interfaces
N. Ghenzi, M. J. Sanchez, F. Gomez-Marlasca +2
Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies di…