136 citations · 505 across the 18 of their papers we have counts for
11 papers · 1 filter
Origin of multistate resistive switching in Ti/manganite/Si/Si heterostructures
W. Román Acevedo, C. Acha, M. J. Sánchez +2
We report on the growth and characterization of Ti/Mn/Si/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an…
Manganite-based three level memristive devices with self-healing capability
W. Román Acevedo, D. Rubi, J. Lecourt +5
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/Mn/n-Si devices is explo…
Correlation between electrical and magnetic properties of phase separated manganites studied with a General Effective Medium model
J. Sacanell, M. Quintero, F. Parisi +3
We have performed electrical resistivity and DC magnetization measurements as a function of temperature, on polycrystalline samples of phase separated LaPrCaMnO. We have used the G…
Asymmetric pulsing for reliable operation of titanium/manganite memristors
F. Gomez-Marlasca, N. Ghenzi, P. Stoliar +4
We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm t…
High resolution determination of ferromagnetic metallic limit in epitaxial La1-xCaxMnO3 films on NdGaO3
D. Sanchez, L. E. Hueso, L. Granja +2
The physical properties of manganites depend strongly on sample morphology, probably due to strain. We investigate the influence of NdGaO3 substrates on the limit of the ferromagne…
Large domain wall resistance in self-organised manganite film
L. Granja, L. E. Hueso, D. Sanchez +3
The electrical resistance of magnetic domain walls in ferromagnetic metallic manganites can be enhanced to 10-12 Ohm.m2 by patterning nanoconstrictions [J. Appl. Phys. 89, 6955 (20…