136 citations · 505 across the 18 of their papers we have counts for
18 papers
Origin of multistate resistive switching in Ti/manganite/Si/Si heterostructures
W. Román Acevedo, C. Acha, M. J. Sánchez +2
We report on the growth and characterization of Ti/Mn/Si/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an…
Manganite-based three level memristive devices with self-healing capability
W. Román Acevedo, D. Rubi, J. Lecourt +5
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/Mn/n-Si devices is explo…
Correlation between electrical and magnetic properties of phase separated manganites studied with a General Effective Medium model
J. Sacanell, M. Quintero, F. Parisi +3
We have performed electrical resistivity and DC magnetization measurements as a function of temperature, on polycrystalline samples of phase separated LaPrCaMnO. We have used the G…
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
P. Stoliar, P. Levy, M. J. Sánchez +7
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here w…
Asymmetric pulsing for reliable operation of titanium/manganite memristors
F. Gomez-Marlasca, N. Ghenzi, P. Stoliar +4
We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm t…
Hysteresis Switching Loops in Ag-manganite memristive interfaces
N. Ghenzi, M. J. Sanchez, F. Gomez-Marlasca +2
Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies di…