activity
20042022
most citedNegative oxygen vacancies in HfO as charge traps in high-k stacks

350 citations · 520 across the 5 of their papers we have counts for

collaborators

5 papers

physics.optics2022

Observation of Fundamental Limit of Light Localization

Farbod Shafiei, Massoud R. Masir, Tommaso Orzali +4

In disordered media light can be localized in the spaces between scattering sites which average to an optical mean free path (MFP). However the fundamental question of the smallest…

physics.app-ph2020

Atomic-Scale Defect Detection by Nonlinear Light Scattering and Localization

Farbod Shafiei, Tommaso Orzali, Alexey Vert +6

Hetero-epitaxial crystalline films underlie many electronic and optical technologies but are prone to forming defects at their hetero-interfaces. Atomic-scale defects such as threa…

cond-mat.mes-hall2010★ 20 cited

Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

Shweta Deora, Abhijeet Paul, R. Bijesh +5

In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si cha…

cond-mat.mtrl-sci2006★ 350 cited

Negative oxygen vacancies in HfO as charge traps in high-k stacks

J. L. Gavartin, D. Munoz Ramo, A. L. Shluger +2

We calculated the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO using atomic basis sets, a non-local density functional and periodic supercell…

cond-mat.mtrl-sci2004★ 150 cited

The role of nitrogen related defects in high-k dielectric oxides: Density functional studies

J. L. Gavartin, A. S. Foster, G. I. Bersuker +1

Using ab initio density functional total energy and molecular dynamics simulations, we study the effects of various forms of nitrogen post deposition anneal (PDA) on the electric p…