Negative oxygen vacancies in HfO${}_2$ as charge traps in high-k stacks

Abstract

We calculated the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO${}_2$ using atomic basis sets, a non-local density functional and periodic supercell. The thermal ionization energies of negatively charged V${}^{-}$ and V${}^{2-}$ centres are consistent with values obtained by the electrical measurements. The results suggest that negative oxygen vacancies are the likely candidates for intrinsic electron traps in the hafnum-based gate stack devices.

3 pages, 2 figures

References in corpus (1)

• The role of nitrogen related defects in high-k dielectric oxides: Density functional studies

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