activity
20022022
most citedUltrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum Well

22 citations · 52 across the 5 of their papers we have counts for

collaborators

5 papers

physics.optics2022★ 2 cited

Gallium-doped Zinc Oxide: Nonlinear Reflection and Transmission Measurements and Modeling in the ENZ Region

Adam Ball, Ray Secondo, Benjamin T. Diroll +5

Strong nonlinear materials have been sought after for decades for applications in telecommunications, sensing, and quantum optics. Gallium-doped zinc oxide is a II-VI transparent c…

cond-mat.mtrl-sci2016

High-field electron transport in bulk ZnO

L. Ardaravičius, J. Liberis, M. Ramonas +6

Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulse…

cond-mat.mtrl-sci2006★ 10 cited

Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlGaN/AlN/GaN heterostructures

N. Biyikli, U. Ozgur, X. F. Ni +3

We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas…

cond-mat.mes-hall2002★ 18 cited

Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

Umit Ozgur, Henry O. Everitt, Stacia Keller +1

Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with…

cond-mat.mes-hall2002★ 22 cited

Ultrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum Well

Umit Ozgur, Henry O. Everitt

Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxa…