High-field electron transport in bulk ZnO

Abstract

Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift velocity on electron density ranging from 1.42$\times$10${}^{17}$ cm${}^{-3}$ to 1.3$\times$10${}^{20}$ cm${}^{-3}$ at a given electric field is deduced after estimation of the sample contact resistance and the Hall electron mobility. Manifestation of the highest electron drift velocity up to $\sim$1.5$\times$10${}^7$ cm/s is estimated for electron density of 1.42$\times$10${}^{17}$ cm${}^{-3}$ and is in agreement with Monte Carlo simulation when hot-phonon lifetime is below 1 ps. A local drift velocity maximum is observed at $\sim$1.1$\times$10${}^{19}$ cm${}^{-3}$ and is in agreement with ultra-fast hot phonon decay.

9 pages, 4 figures, 1 table