34 citations · 89 across the 7 of their papers we have counts for
7 papers
Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route
Dhruv Fomra, Ray Secondo, Kai Ding +4
To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium n…
High-field electron transport in bulk ZnO
L. Ardaravičius, J. Liberis, M. Ramonas +6
Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulse…
Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As
W. Limmer, A. Koeder, S. Frank +8
The effect of annealing at 250 C on the carrier depth profile, Mn distribution, electrical conductivity, and Curie temperature of (Ga,Mn)As layers with thicknesses > 200 nm, grown…
Growth of GaMnAs under near-stoichiometric conditions
V. Avrutin, D. Humienik, S. Frank +5
We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by molecular beam epitaxy. For…
Enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices
A. Koeder, W. Limmer, S. Frank +6
We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy, which is due to thin InGaMnAs or InGaAs films…
Electronic and magnetic properties of GaMnAs: Annealing effects
W. Limmer, A. Koeder, S. Frank +6
The effect of short-time and long-time annealing at 250C on the conductivity, hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs heterostructures is st…