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20022022
most citedUltrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum Well

22 citations · 52 across the 5 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

2 papers · 1 filter

cond-mat.mes-hall2002★ 18 cited

Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

Umit Ozgur, Henry O. Everitt, Stacia Keller +1

Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with…

cond-mat.mes-hall2002★ 22 cited

Ultrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum Well

Umit Ozgur, Henry O. Everitt

Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxa…