activity
19972024
most citedQuantum gates by coupled asymmetric quantum dots and controlled-NOT-gate operation

132 citations · 832 across the 46 of their papers we have counts for

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15 papers · 1 filter

cond-mat.mes-hall2022★ 4 cited

Five and three quantum dot systems as apparatuses for measuring energy-levels

Tetsufumi Tanamoto, Tomosuke Aono

A quantum dot (QD) system provides various quantum physics of nanostructures. So far, many types of semiconductor QD structures have been fabricated and investigated experimentally…

cond-mat.mes-hall2021

Simulations of hybrid charge-sensing single-electron-transistors and CMOS circuits

Tetsufumi Tanamoto, Keiji Ono

Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those o…

cond-mat.mes-hall2019★ 98 cited

Reservoir Computing on Spin-Torque Oscillator Array

Taro Kanao, Hirofumi Suto, Koichi Mizushima +3

We numerically study reservoir computing on a spin-torque oscillator (STO) array, describing the magnetization dynamics of the STO array by a nonlinear oscillator model. The STOs e…

cond-mat.mes-hall2017★ 43 cited

Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor

Keiji Ono, G. Giavaras, Tetsufumi Tanamoto +3

We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a doub…

cond-mat.mes-hall2013★ 4 cited

Effects of interface electric field on the magnetoresistance in spin device

T. Tanamoto, M. Ishikawa, T. Inokuchi +2

An extension of the standard spin diffusion theory is presented by introducing a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. T…

cond-mat.mes-hall2013★ 16 cited

Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor

K. Ono, T. Tanamoto, T. Ohguro

We describe a measurement method that enables the correct estimation of the charging energy of an unintentional quantum dot (QD) in the channel of a metal-oxide-semiconductor field…