227 citations · 315 across the 11 of their papers we have counts for
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cond-mat.mes-hall2007★ 15 cited
Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation
Enrico Prati, Marco Fanciulli, Alessandro Calderoni +2
Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing…
cond-mat.mes-hall2005★ 19 cited
Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs
Enrico Prati, Marco Fanciulli, Giorgio Ferrari +1
We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense…