131 citations · 1.1k across the 32 of their papers we have counts for
9 papers · 2 filters
GaSbBi alloys and heterostructures: fabrication and properties
O. Delorme, L. Cerutti, R. Kudrawiec +6
Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antim…
Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Mani Azadmand, Tomas Auzelle, Jonas Lähnemann +7
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionall…
Lattice matched Volmer-Weber growth of FeSi on GaAs(001) -- the influence of the growth rate
B Jenichen, Z Cheng, M Hanke +2
We investigate the formation of lattice matched single-crystalline FeSi/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the e…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Characterization of L21 order in Co2FeSi thin films on GaAs
B Jenichen, T Hentschel, J Herfort +3
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffr…
Long-range order and thermal stability of thin CoFeSi films on GaAs(111)B
B Jenichen, J Herfort, K Kumakura +1
CoFeSi/GaAs(111)B hybrid structures are grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The CoFeSi fi…