159 citations · 402 across the 8 of their papers we have counts for
8 papers
Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBiTe(BiTe) Superlattices
Joanna Sitnicka, Kyungwha Park, Paweł Skupiński +17
MnBiTe(BiTe) materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state.…
Observation of high-temperature quantum anomalous Hall regime in intrinsic MnBiTe/BiTe superlattice
Haiming Deng, Zhiyi Chen, Agnieszka Wolos +11
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically…
Stable topological insulators achieved using high energy electron beams
Lukas Zhao, Marcin Konczykowski, Haiming Deng +9
Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull…
Electron Paramagnetic Resonance of Mn in BiSe Topological Insulator
Agnieszka Wolos, Aneta Drabinska, Maria Kaminska +6
Electron paramagnetic resonance was used to investigate Mn impurity in BiSe topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn…
Landau level spectroscopy of relativistic fermions with low Fermi velocity in Bi2Te3 three-dimensional topological insulator
A. Wolos, S. Szyszko, A. Drabinska +5
X-band microwave spectroscopy is applied to study the cyclotron resonance in Bi2Te3 exposed to ambient conditions. With its help, intraband transitions between Landau levels of rel…
Properties of metal-insulator transition and electron spin relaxation in GaN:Si
A. Wolos, Z. Wilamowski, M. Piersa +4
We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-…
Rashba field in GaN
A. Wolos, Z. Wilamowski, C. Skierbiszewski +4
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large differe…
Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties
A. Bonanni, M. Kiecana, C. Simbrunner +8
We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray…