Electron Paramagnetic Resonance of Mn in Bi${}_2$Se${}_3$ Topological Insulator

Abstract

Electron paramagnetic resonance was used to investigate Mn impurity in Bi${}_2$Se${}_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn${}^2$${}^{+}$ configuration, was detected regardless of the conductivity type of the host material. This means that Mn${}^2$${}^{+}$(d${}^5$) energy level is located within the valence band, and Mn${}^1$${}^{+}$(d${}^6$) energy level is outside the energy gap of Bi${}_2$Se${}_3$. The electron paramagnetic resonance spectrum of Mn${}^2$${}^{+}$ in Bi${}_2$Se${}_3$ is characterized by the isotropic g-factor |g| = 1.91 and large axial parameter D = -4.20 GHz x h. This corresponds to the zero-field splitting of the Kramers doublets equal to 8.4 GHz x h and 16.8 GHz x h, respectively, which is comparable to the Zeeman splitting for the X-band. Mn in Bi${}_2$Se${}_3$ acts as an acceptor, effectively reducing native-high electron concentration, compensating selenium vacancies, and resulting in p-type conductivity.

References in corpus (1)

• The Nature of Magnetic Ordering in Magnetically Doped Topological Insulator Bi${}_{2-x}$Fe${}_x$Se${}_3$