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Properties of metal-insulator transition and electron spin relaxation in GaN:Si
A. Wolos, Z. Wilamowski, M. Piersa +4
We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-…
Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene
M. Orlita, C. Faugeras, J. Borysiuk +8
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bi…
Quasi-classical cyclotron resonance of Dirac fermions in highly doped graphene
A. M. Witowski, M. Orlita, R. Stepniewski +6
Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties o…
Fluorographene: Two Dimensional Counterpart of Teflon
R. R. Nair, W. C. Ren, R. Jalil +16
We report a stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical and transport studies show that the mate…