54 citations · 270 across the 18 of their papers we have counts for
7 papers · 1 filter
Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure
Igor V. Rozhansky, Ina V. Kalitukha, Grigorii S. Dimitriev +6
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to stu…
Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres
M. A. G. Balanta, M. J. S. P. Brasil, F. Iikawa +6
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quant…
Analysis of homogeneity of 2D electron gas at decreasing of electron density
A. A. Sherstobitov, G. M. Minkov, A. V. Germanenko +3
We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possi…
Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition
Yu. G. Arapov, S. V. Gudina, G. I. Harus +6
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0)…
Weak antilocalization in quantum wells in tilted magnetic fields
G. M. Minkov, A. V. Germanenko, O. E. Rut +4
Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the…
New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime
L. A. Ponomarenko, D. T. N. de Lang, A. de Visser +4
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two di…
Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov +8
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of th…