Quantum corrections to conductivity: from weak to strong localization

Abstract

Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for $k_{F}l=25-2$ and behaves like diffusive one for $k_{F}l=2-0.5$ down to the temperature T=0.4 K. It has been therewith found that the quantum corrections are not small at low temperature when $k_{F}l\simeq 1$. They are close in magnitude to the Drude conductivity so that the conductivity $\sigma$ becomes significantly less than $e^2/h$ (the minimal $\sigma$ value achieved in our experiment is about $3\times 10^{-8}{\Omega }^{-1}$ at $k_{F}l\simeq 0.5$ and $T=0.46$ K). We conclude that the temperature and magnetic field dependences of conductivity in whole $k_{F}l$ range are due to changes of quantum corrections.

RevTex 4.0, 10 figures, 7 two-column pages

References in corpus (2)

• Does theory of quantum correction to conductivity agree with experimental data in 2D systems?
• Role of doped layers in dephasing of 2D electrons in quantum well structures

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