Role of doped layers in dephasing of 2D electrons in quantum well structures
arXiv:cond-mat/0106045 · doi:10.1103/PhysRevB.64.193309
Abstract
The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in quantum well and to saturation of the phase breaking time at low temperature.
4 pages, 6 figures
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