456 citations · 1.5k across the 17 of their papers we have counts for
4 papers · 1 filter
ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon
S. Shankar, A. M. Tyryshkin, S. A. Lyon
Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopa…
Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
R. M. Jock, S. Shankar, A. M. Tyryshkin +7
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices…
Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon
H. Tezuka, A. R. Stegner, A. M. Tyryshkin +5
The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow…
Spin resonance of 2D electrons in a large-area silicon MOSFET
S. Shankar, A. M. Tyryshkin, S. Avasthi +1
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to ar…