294 citations · 1.7k across the 19 of their papers we have counts for
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Tunable spin-selective loading of a silicon spin qubit
C. B. Simmons, J. R. Prance, B. J. Van Bael +8
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attr…
Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
Madhu Thalakulam, C. B. Simmons, B. J. Van Bael +6
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and…
Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
C. B. Simmons, Teck Seng Koh, Nakul Shaji +12
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states t…
Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot
Teck Seng Koh, C. B. Simmons, M. A. Eriksson +2
Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experim…
Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
Madhu Thalakulam, C. B. Simmons, B. M. Rosemeyer +5
We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-ele…