380 citations · 2.3k across the 19 of their papers we have counts for
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Water induced bandgap engineering in nanoribbons of hexagonal boron nitride
Chen Chen, Yang Hang, Hui Shan Wang +13
Different from hexagonal boron nitride (hBN) sheets, the bandgap of hBN nanoribbons (BNNRs) can be changed by spatial/electrostatic confinement. It has been predicted that a transv…
Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride
Lingxiu Chen, Kenan Elibol, Haifang Cai +12
Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical s…
Grain Boundaries in Chemical Vapor Deposited Atomically Thin Hexagonal Boron Nitride
Xibiao Ren, Jichen Dong, Peng Yang +8
Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously…
Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride
Lingxiu Chen, Haomin Wang, Shujie Tang +8
Edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still…
Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride
Shujie Tang, Haomin Wang, Hui Shan Wang +12
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics…
Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy
Guangyuan Lu, Tianru Wu, Qinghong Yuan +5
Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices.…