69 citations · 147 across the 4 of their papers we have counts for
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Room temperature ballistic transport in InSb quantum well nanodevices
A. M. Gilbertson, A. Kormanyos, P. D. Buckle +5
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well…
High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures
A. M. Gilbertson, W. R. Branford, M. Fearn +4
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39…
Zero-field spin-splitting and spin lifetime in n-InSb/In1-xAlxSb asymmetric quantum well heterostructures
A. M. Gilbertson, M. Fearn, J. H. Jefferson +3
The spin-orbit (SO) coupling parameters for lowest conduction subband due to structural (SIA) and bulk (BIA) inversion asymmetry are calculated for a range of carrier densities in…
A Surface-Gated InSb Quantum Well Single Electron Transistor
J. M. S. Orr, P. D. Buckle, M. Fearn +3
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable ad…