Justin H. Chen

activity

20222026

most citedExperimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise

2 citations · 2 across the 3 of their papers we have counts for

collaborators

Showing 2026 · cond-mat.mes-hallShow all

1 paper · 2 filters

cond-mat.mes-hall2026

On the $I n_{x} G a_{1 - x} As$ channel noise in InP HEMTs from 4 K to 300 K

Junjie Li, Justin H. Chen, Austin J. Minnich +1

The InP high-electron-mobility transistor (HEMT) is indispensable for low-noise amplifiers (LNAs) in radio astronomy and quantum computing. The composition of the $\mathrm{In_{x}Ga…

On the Inx​Ga1−x​As channel noise in InP HEMTs from 4 K to 300 K

On the $I n_{x} G a_{1 - x} As$ channel noise in InP HEMTs from 4 K to 300 K