Justin H. Chen

activity

20222026

most citedExperimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise

2 citations · 2 across the 3 of their papers we have counts for

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cond-mat.mes-hall2026

On the $I n_{x} G a_{1 - x} As$ channel noise in InP HEMTs from 4 K to 300 K

Junjie Li, Justin H. Chen, Austin J. Minnich +1

The InP high-electron-mobility transistor (HEMT) is indispensable for low-noise amplifiers (LNAs) in radio astronomy and quantum computing. The composition of the $\mathrm{In_{x}Ga…

cond-mat.mes-hall2022★ 2 cited

Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise

Bekari Gabritchidze, Kieran A. Cleary, Anthony C. Readhead +1

We report the on-wafer characterization of $S$ -parameters and microwave noise temperature ( $T_{50}$ ) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 4…

On the Inx​Ga1−x​As channel noise in InP HEMTs from 4 K to 300 K

Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise

On the $I n_{x} G a_{1 - x} As$ channel noise in InP HEMTs from 4 K to 300 K