2 citations · 2 across the 3 of their papers we have counts for
3 papers
On the channel noise in InP HEMTs from 4 K to 300 K
Junjie Li, Justin H. Chen, Austin J. Minnich +1
The InP high-electron-mobility transistor (HEMT) is indispensable for low-noise amplifiers (LNAs) in radio astronomy and quantum computing. The composition of the $\mathrm{In_{x}Ga…
Investigation of Cryogenic Current-Voltage Anomalies in SiGe HBTs: Role of Base-Emitter Junction Inhomogeneities
Nachiket R. Naik, Bekari Gabritchidze, Justin H. Chen +3
The deviations of cryogenic collector current-voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of inves…
Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise
Bekari Gabritchidze, Kieran A. Cleary, Anthony C. Readhead +1
We report the on-wafer characterization of -parameters and microwave noise temperature () of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 4…