149 citations · 389 across the 8 of their papers we have counts for
5 papers · 1 filter
Resonant escape over an oscillating barrier in single-electron ratchet transfer
Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono +2
Single-electron escape from a metastable state over an oscillating barrier is experimentally investigated in silicon-based ratchet transfer. When the barrier is oscillating on a ti…
A gate-defined silicon quantum dot molecule
H. W. Liu, T. Fujisawa, H. Inokawa +3
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable…
Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
H. W. Liu, T. Fujisawa, Y. Ono +4
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoele…
Anomalous Resistance Ridges Along Filling Factor
K. Takashina, M. Brun, T. Ota +5
We report anomalous structure in the magnetoresistance of SiO/Si(100)/SiO quantum wells. When Landau levels of opposite valleys are driven through coincidence at the Fermi…
Valley Polarization in Si(100) at Zero Magnetic Field
K. Takashina, Y. Ono, A. Fujiwara +2
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO/(100)Si/SiO quantum well is examined through transport measurements. We demonstrat…