749 citations · 1.7k across the 25 of their papers we have counts for
16 papers · 1 filter
Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene Heterointerfaces
Jiayun Liang, Ke Ma, Xiao Zhao +19
Intercalation is a process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on intercalating metal…
Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking
Edy Cardona, Matthew K. Horton, Daniel Paulo-Wach +6
Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-pe…
Carrier and Phonon Dynamics in Multilayer WSe2 captured by Extreme Ultraviolet Transient Absorption Spectroscopy
Juwon Oh, Hung-Tzu Chang, Christopher T. Chen +3
Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-…
Hard ferromagnetism down to the thinnest limit of iron-intercalated tantalum disulfide
Samra Husremović, Katherine Inzani, Catherine K. Groschner +11
Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable m…
Tuning color centers at a twisted interface
Cong Su, Fang Zhang, Salman Kahn +15
Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Emp…
Coupled Valence Carrier and Core-Exciton Dynamics in WS Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy
Hung-Tzu Chang, Alexander Guggenmos, Christopher T. Chen +7
Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously p…
Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride
Mehmet Dogan, S. Matt Gilbert, Thang Pham +5
Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atom…
Alternative Stacking Sequences in Hexagonal Boron Nitride
S. Matt Gilbert, Thang Pham, Mehmet Dogan +8
The relative orientation of successive sheets, i.e. the stacking sequence, in layered two-dimensional materials is central to the electronic, thermal, and mechanical properties of…
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…
Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Bruno Schuler, Diana Y. Qiu, Sivan Refaely-Abramson +10
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect st…
Bright sub-20 nm cathodoluminescent nanoprobes for multicolor electron microscopy
Maxim B. Prigozhin, Peter C. Maurer, Alexandra M. Courtis +18
Electron microscopy (EM) has been instrumental in our understanding of biological systems ranging from subcellular structures to complex organisms. Although EM reveals cellular mor…
Fabrication of Atomically Precise Nanopores in Hexagonal Boron Nitride
S. Matt Gilbert, Gabriel Dunn, Thang Pham +4
We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (hBN) with atomically precise control of the pore size. Previous methods of pore production in oth…
Origin of reversible photo-induced phase separation in hybrid perovskites
Connor G. Bischak, Craig L. Hetherington, Hao Wu +4
Nonequilibrium processes occurring in functional materials can significantly impact device efficiencies and are often difficult to characterize due to the broad range of length and…
Local formation of nitrogen-vacancy centers in diamond by swift heavy ions
J. Schwartz, S. Aloni, D. F. Ogletree +6
We exposed nitrogen-implanted diamonds to beams of swift uranium and gold ions (~1 GeV) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) cen…
Effects of low energy electron irradiation on formation of nitrogen-vacancy centers in single-crystal diamond
Julian Schwartz, Shaul Aloni, D. Frank Ogletree +1
Exposure to beams of low energy electrons (2 to 30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have be…
Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires
Alexandra C. Ford, Johnny C. Ho, Zhiyong Fan +5
InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation.…