150 citations · 167 across the 7 of their papers we have counts for
10 papers · 1 filter
Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking
Edy Cardona, Matthew K. Horton, Daniel Paulo-Wach +6
Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-pe…
Tuning color centers at a twisted interface
Cong Su, Fang Zhang, Salman Kahn +15
Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Emp…
Coupled Valence Carrier and Core-Exciton Dynamics in WS Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy
Hung-Tzu Chang, Alexander Guggenmos, Christopher T. Chen +7
Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously p…
Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride
Mehmet Dogan, S. Matt Gilbert, Thang Pham +5
Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atom…
Alternative Stacking Sequences in Hexagonal Boron Nitride
S. Matt Gilbert, Thang Pham, Mehmet Dogan +8
The relative orientation of successive sheets, i.e. the stacking sequence, in layered two-dimensional materials is central to the electronic, thermal, and mechanical properties of…
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…