Tuning color centers at a twisted interface
arXiv:2108.04747
Abstract
Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Employing cathodoluminescence, we demonstrate that an ultraviolet-emitting single photon emitter can be readily activated and controlled on-demand at the twisted interface of two hexagonal boron nitride flakes. The brightness of the color center can be enhanced by two orders of magnitude by altering the twist angle. Additionally, a brightness modulation of nearly 100% of this color center is achieved by an external voltage. Our ab-initio GW calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron-hole recombination. This mechanism is further exploited to draw nanoscale color center patterns using electron beams.
References in corpus (18)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- High-sensitivity diamond magnetometer with nanoscale resolution
- Moiré Excitons in Van der Waals Heterostructures
- Signatures of moiré-trapped valley excitons in MoSe/WSe heterobilayers
- Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
- BerkeleyGW: A Massively Parallel Computer Package for the Calculation of the Quasiparticle and Optical Properties of Materials and Nanostructures
- Twistable electronics with dynamically rotatable heterostructures
- Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride
- Defect-related photoluminescence of hexagonal boron nitride
- Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping
- Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
- Optical absorption and emission mechanisms of single defects in hexagonal boron nitride
- Effect of Semicore Orbitals on the Electronic Band Gaps of Si, Ge, and GaAs within the GW Approximation
- Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
- Fast optical modulation of the fluorescence from a single NV centre
- Optical control of the charge state of color centers in hexagonal boron nitride