150 citations · 152 across the 4 of their papers we have counts for
7 papers
How Substitutional Point Defects in Two-Dimensional WS Induce Charge Localization, Spin-Orbit Splitting, and Strain
Bruno Schuler, Jun-Ho Lee, Christoph Kastl +13
Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semicond…
Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride
Mehmet Dogan, S. Matt Gilbert, Thang Pham +5
Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atom…
Characterizing Transition-Metal Dichalcogenide Thin-Films using Hyperspectral Imaging and Machine Learning
Brian Shevitski, Christopher T. Chen, Christoph Kastl +4
Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely dif…
Tunable Electronic Structure in Gallium Chalcogenide van der Waals Compounds
Brian Shevitski, Søren Ulstrup, Roland J. Koch +8
Transition metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition.…
Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
Brian Shevitski, S. Matt Gilbert, Christopher T. Chen +8
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color c…
Fabrication of Atomically Precise Nanopores in Hexagonal Boron Nitride
S. Matt Gilbert, Gabriel Dunn, Thang Pham +4
We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (hBN) with atomically precise control of the pore size. Previous methods of pore production in oth…